| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal production apparatus and a single crystal production method, wherein a high-quality single crystal can be stably obtained by shortening the thermal melting time of a polycrystalline raw material. SOLUTION: The single crystal production apparatus is an apparatus for production by the Czochralski method and comprises a crucible for holding a polycrystalline raw material, a heater which is arranged so as to surround the crucible and heats and melts the polycrystalline raw material to form a raw material melt, a pulling means which pulls a single crystal from the melt, a first heat shield disposed so as to be opposite to the surface of the melt in the crucible, and a heating means which is disposed below the first heat shield and heats the polycrystalline raw material. The single crystal production method is a method for production by the Czochralski method and comprises arranging a heater so as to surround a crucible for holding a polycrystalline raw material, arranging a first heat shield so as to be opposite to the surface of the raw material melt in the crucible, arranging a heat generating means below the first heat shield, melting the polycrystalline raw material into a raw material melt by heating with the heater and the heat generating means, and pulling a single crystal from the melt by a pulling means. COPYRIGHT: (C)2005,JPO&NCIPI
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