| 摘要 |
Provided is an invention related to a SOC containing a DRAM and an analog device for increasing a capacitance of a capacitor in SOC and a method of fabricating the SOC. Two conductive layers are used for lower electrode in a capacitor for unit cells of the DRAM, and the whole surface of the upper electrode is capped with a second dielectric layer to maximally increase in the contact surface between the dielectric layer and the upper and lower electrodes.
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