| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solution and a method for polishing Cu-based metal by which the working speed of a Ta-based metallic film of a barrier metal layer can be lowered without compromising the working speed and surface roughness of a Cu-based metallic film of a metallic wiring layer. <P>SOLUTION: Since the working speed of the Ta-based metallic film can be lowered without changing significantly the working speed of the Cu-based metallic film at the time of polishing a copper wiring layer containing the Ta-based metallic film as a barrier layer by CMP by using a polishing solution containing TETA, TEPA, and PEHA, the Ta barrier layer can be polished nondefectively without degrading the productivity. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
