| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device and its manufacturing method by which oxidations of a word line and a reading line can be prevented and a composite magnetic field between a bit line and a word line is made high. SOLUTION: Upper parts of a word line 12 and a reading line 52 are covered with a cap 43 formed of Ta, and only a diffusion prevention film 32 is interposed between the word line 12 and a TMR device 10. Thus, since a distance between the word line 12 and the TMR device 10 is made short, a composite magnetic field can be made high between a bit line 11 and the word line 12, and writing operability can be improved. Furthermore, the reading line 52 can be prevented from being oxidized during a manufacturing process by means of the cap 43, so that the appropriate contact characteristic of reading wiring 22 for the reading line 52 can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI
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