| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film semiconductor device which is capable of easily and surely forming a semiconductor thin film whose plane orientation is well controlled. SOLUTION: The method of manufacturing the thin film semiconductor device comprises a process (S103) of forming micropores in a board whose one side is at least insulating, a process (S104) of depositing a crystallization promoting film which promotes the crystallization of a semiconductor film on the board including the bottoms of the micropores, a process (S105) of depositing a first amorphous semiconductor film inside the micropores and on the crystallization promoting film, a process (S106) of removing the first amorphous semiconductor film and the crystallization promoting film from the surface of the board leaving the first amorphous semiconductor film inside the micropores unremoved, a process (S107) of depositing a second amorphous semiconductor film, and a process (S109) of forming a nearly single crystal semiconductor crystal grain having a prescribed plane orientation in a region where the micropore is located at its center by melting/crystallizing the first and second amorphous semiconductor film. COPYRIGHT: (C)2005,JPO&NCIPI
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