发明名称 |
SURFACE-EMITTING SEMICONDUCTOR LASER |
摘要 |
In a surface emitting semiconductor laser device, an active layer and a current blocking layer arranged near the active layer are both arranged between two reflecting mirror layer structures. The current blocking layer is an AlInAs layer having an oxidized region formed at its peripheral portion. The surface emitting semiconductor laser device operates with a low threshold current, and can operate continuously in a high temperature. <IMAGE> |
申请公布号 |
EP1076389(A4) |
申请公布日期 |
2005.03.02 |
申请号 |
EP19990954370 |
申请日期 |
1999.11.04 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
MUKAIHARA, TOSHIKAZU;IWAI, NORIHIRO;KASUKAWA, AKIHIKO |
分类号 |
H01S5/183;H01S5/323 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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