| 摘要 |
1,247,985. Semi-conductor devices. R.C.A. CORPORATION. 13 May, 1969 [21 Aug., 1968], No. 24343/69. Heading H1K. A semi-conductor capacitor comprises a layer 12 of semi-conductor material on which is a layer 14 of insulating material having apertures to allow a plurality of interconnected conductive fingers 16 to contact the semi-conductor, and a further plurality of interconnected conductive fingers 18 arranged in interdigitated relationship with the first set being disposed on the surface of the insulating layer, the two sets of conductive fingers serving as electrodes of the capacitor. The semi-conductor material may be silicon or cadmium selenide, and may be formed by epitaxy on an insulating substrate of sapphire or ceramic, or in a further embodiment, Fig. 5, not shown, may be formed on a body of semi-conductor material of the opposite conductivity type. The insulating layer is formed from the oxide of the semi-conductive material and the conductive fingers may be of metal or very low resistivity semi-conductor material. |
