发明名称 |
Photoresist scum free process for via first dual damascene process |
摘要 |
An improved method of forming a dual damascene structure by a via first process is described. Via holes are formed in a damascene stack consisting of an etch stop layer, a dielectric layer, and a barrier layer. An i-line photoresist is coated on the substrate and fills the vias. An e-beam curing step is performed to render the photoresist components inactive towards adjacent layers. The photoresist is etched back to a level about 1600 Angstroms above the via bottom to form a plug. A second curing step may be performed and then a Deep UV resist is preferably coated and patterned to form a trench opening above the vias. There is no interaction between the Deep UV photoresist and the cured plug which thereby prevents scum or bridging defects from occurring. Fences during trench etch are avoided. Plug stabilization also prevents voids from forming during trench patterning.
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申请公布号 |
US6861376(B1) |
申请公布日期 |
2005.03.01 |
申请号 |
US20020268587 |
申请日期 |
2002.10.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
CHEN DIAN-HAU;SHIU RUEI-JE;WU JUEI-KUO |
分类号 |
G03F7/00;H01L21/027;H01L21/768;(IPC1-7):H01L21/31;H01L21/302;H01L21/476 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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