发明名称 Semiconductor device and production method thereof
摘要 In a semiconductor device including an insulating core substrate, a plurality of layers of wiring patterns on the core substrate and insulating layers interposed between the wiring patterns, each adjacent pair of the wiring patterns being electrically connected through a conductor portion penetrating through the insulating layer interposed between them, each of the insulating layers is formed integrally, semiconductor chips thinner than one layer of the insulating layer are mounted into at least one of the insulating layers, and the semiconductor chips are electrically connected to one layer of the wiring pattern of one insulating layer adjacent on the side of the core substrate.
申请公布号 US6861284(B2) 申请公布日期 2005.03.01
申请号 US20030335689 申请日期 2003.01.02
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 HIGASHI MITSUTOSHI;MURAYAMA KEI;SAKAGUCHI HIDEAKI;KOIKE HIROKO
分类号 H05K3/46;H01L21/56;H01L23/12;H01L23/538;H01L25/00;H01L25/065;H01L25/07;H01L25/18;H05K1/18;(IPC1-7):H01L21/44;H01L21/48;H01L21/50;H01L21/476 主分类号 H05K3/46
代理机构 代理人
主权项
地址