发明名称 Method of fabricating a monolithic expanded beam mode electroabsorption modulator
摘要 A method of manufacturing a monolithic expanded beam mode electroabsorption modulator including a waveguide layer with a two expansion/contraction sections and an electroabsorption section arranged along a longitudinal axis. At least one patterned growth retarding layer is formed on the top surface of a substrate. The waveguide layer is formed on a portion of the top surface of the substrate by selective area growth and has an index of refraction different from the substrate. An electroabsorption portion of the waveguide layer has a thickness which is greater than thicknesses in its other portions. The semiconductor layer is formed on the waveguide layer and includes an index of refraction different from the waveguide. The waveguide and semiconductor layers are defined and etched to form the expansion/contraction and electroabsorption sections of the waveguide layer. Electrical contacts are formed, one electrically coupled to the substrate and another electrically coupled to the semiconductor layer.
申请公布号 US6862376(B2) 申请公布日期 2005.03.01
申请号 US20040895699 申请日期 2004.07.21
申请人 T-NETWORKS, INC. 发明人 BOND AARON;JAMBUNATHAN RAM;CHOI WON JIN
分类号 G02F1/017;(IPC1-7):G02F1/01;G02F1/035;G02B6/10;H01L21/00 主分类号 G02F1/017
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