SOLID STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF CAPABLE OF PREVENTING OXIDATION OF TRANSFER ELECTRODES USING SIDEWALL INSULATING LAYER

摘要

PURPOSE: A solid state imaging device and a manufacturing method thereof are provided to minimize a size of the imaging device by preventing oxidation of transfer electrodes using a sidewall insulating layer on side portions of the transfer electrodes. CONSTITUTION: A solid state imaging device includes a charge transfer portion, a plurality layers of charge transfer electrodes(2A,2B), and sidewall insulating layers(8,11). The charge transfer portion is provided on one side of a light-receiving portion. The charge transfer portion is composed of plural layers of charge transfer electrodes. The sidewall insulating layers are formed on side surfaces of the charge transfer electrodes of respective layers of the charge transfer electrodes.