CHEMICAL MECHANICAL PLANARIZATION COMPOSITION FOR REDUCING EROSION IN SEMICONDUCTOR WAFERS, WHICH COMPRISES OXIDANT, ABRASIVE, INHIBITOR FOR DECREASING METAL INTERCONNECT REMOVAL, AND CARBOXYLIC ACID POLYMER

摘要

PURPOSE: A chemical mechanical planarization composition is provided to selectively remove tantalum barrier layers while simultaneously reducing erosion of dielectric materials in semiconductor wafers and to remove barrier layers from patterned wafers with decreased defective rates. CONSTITUTION: The aqueous chemical mechanical planarization composition comprises an oxidant for promoting barrier removal, an abrasive, an inhibitor for decreasing removal of a metal interconnect, and a carboxylic acid polymer having at least one repeating unit comprising at least two carboxylic acid functionalities, wherein the composition has a pH of 4 or below and a tantalum nitride removal rate of 80% or more of copper removal rate at a pad pressure of 13.8 kPa. In particular, the carboxylic acid polymer comprises a homopolymer or a copolymer, preferably polymaleic acid.