METALLIC INTERCONNECTION STRUCTURE FOR PREVENTING VOIDS AND METHOD FOR INTERCONNECTING METALS WITH VOID EXPANSION STOPPING LAYER

摘要

PURPOSE: A metallic interconnection structure for preventing voids and a method for interconnecting metals are provided to improve device stability by forming a void diffusion barrier layer on a diffusion path of the voids into a via contact hole. CONSTITUTION: A lower metallic interconnection pattern is implemented in a first interlayer dielectric(106). A metallic insulating layer(112) includes a via contact hole(120a,120b) exposing a portion of a surface of the lower metallic interconnection pattern. A second interlayer dielectric includes a trench for exposing the via contact hole on the metallic insulating layer. A barrier metallic layer(122a,122b) is formed on a side portion of the via contact hole and the exposed surface of the second lower metallic interconnection pattern. A first upper metallic interconnection pattern(124a) fills the via contact hole and a portion of the trench. A void diffusion barrier layer(128) is formed on the first upper metallic interconnection pattern. A second upper metallic interconnection layer pattern(124b) fills all inner portion of the trench on the void diffusion barrier layer.