发明名称 |
[METHOD FOR FORMING AN OXIDE/ NITRIDE/OXIDE STACKED LAYER] |
摘要 |
A method for fabricating a silicon oxide/silicon nitride/silicon oxide stacked layer structure is described. A bottom oxide layer is formed over a substrate. A surface treatment is then performed on the first silicon oxide layer to form an interface layer over the bottom oxide layer. The surface treatment is conducted in a nitrogen ambient. Thereafter, a silicon nitride layer is formed over the interface layer, followed by forming an upper silicon oxide layer over the silicon nitride layer.
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申请公布号 |
US2005037578(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20030604764 |
申请日期 |
2003.08.14 |
申请人 |
CHEN WEI WEN;HAN TZUNG-TING;YANG YUN-CHI;YANG LING-WUU;CHEN KUANG-CHAO |
发明人 |
CHEN WEI WEN;HAN TZUNG-TING;YANG YUN-CHI;YANG LING-WUU;CHEN KUANG-CHAO |
分类号 |
H01L21/28;H01L21/314;(IPC1-7):H01L21/336;H01L21/31;H01L21/469;H01L21/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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