发明名称 |
High voltage transistor and method of manufacturing the same |
摘要 |
The present invention relates to a high voltage transistor and method of manufacturing the same. The high voltage transistor includes: a channel region which is formed in a semiconductor substrate; a gate insulating film which is formed on the channel region of the semiconductor substrate; a low concentration source region and a low concentration drain region having the channel region interposed therebetween and each being formed in the semiconductor substrate; a high concentration source region which is formed to be spaced away from the channel region by a first distance; a high concentration drain region which is formed to be spaced away from the channel region by a second distance that is larger than the first distance; a gate electrode which has a gate bottom portion interfacing with the gate insulating film over the channel region, and a gate top portion integrated with the gate bottom portion and protruding by a predetermined length from a top of the gate bottom portion to extend over the low concentration drain region; a first metal silicide layer which is formed on the high concentration source region; and a second metal silicide layer which is formed on the high concentration drain region.
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申请公布号 |
US2005035404(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20040899371 |
申请日期 |
2004.07.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YU TAE-KWANG;JEON HEE-SEOG;YOON SEUNG-BEOM;KIM YONG-TAE |
分类号 |
H01L29/41;H01L21/265;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/417;H01L29/423;H01L29/78;H01L29/788;H01L29/792;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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