发明名称 |
Immersion fluid for immersion Lithography, and method of performing immersion lithography |
摘要 |
An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 with a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 comprising the steps of: introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.
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申请公布号 |
US2005036183(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20040803712 |
申请日期 |
2004.03.18 |
申请人 |
YEO YEE-CHIA;LIN BURN-JENG;HU CHENMING |
发明人 |
YEO YEE-CHIA;LIN BURN-JENG;HU CHENMING |
分类号 |
G03F7/20;(IPC1-7):G02B5/32 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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