| 发明名称 |
SEMICONDUCTOR DEVICE HAVING TERNARY COMPOUND CHANNEL LAYER |
| 摘要 |
<p>A semiconductor device including a source electrode (20, 82), a drain electrode (22, 84) and a channel (18, 92) coupled to the source electrode (20, 82) and the drain electrode (22, 84). The channel (18, 92) is comprised of a ternary compound containing zinc, tin and oxygen. The semiconductor device further includes a gate electrode (12, 80) configured to permit application of an electric field to the channel (18, 92).</p> |
| 申请公布号 |
WO2005015643(A1) |
申请公布日期 |
2005.02.17 |
| 申请号 |
WO2004US20676 |
申请日期 |
2004.06.25 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;HOFFMFAN, RANDY;CHIANG, HAI;WAGER, JOHN |
发明人 |
HOFFMFAN, RANDY;CHIANG, HAI;WAGER, JOHN |
| 分类号 |
H01L27/12;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L27/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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