METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device for reducing a short-circuit resulting from scratch generated between wires due to micro-miniaturization of semiconductor device and improving SM resistance of a via part. SOLUTION: An embedded wiring is formed to a first insulation film on a semiconductor substrate. A stepped portion is formed between the wiring and a first insulation film by drawing back the first insulation film between the wires with the etching process. A second insulation film is then formed to reflect such stepped portion. Thereafter, a third insulation film is formed for the flattening. A via plug is then formed for connection with the wiring. In this step, concentration of stress of via can be alleviated by covering the connecting portion of the via plug and wiring with the second insulation film. COPYRIGHT: (C)2005,JPO&NCIPI