| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is low enough in resistance, capable of ensuring a high intergate withstand voltage, and highly reliable even when a control gate resistance lowering metal film is formed of WSi having an Si/W composition ratio of 2.4 or below to 1 or W. SOLUTION: The side wall of a control gate resistance lowering metal film 25 formed of WSi having an Si/W composition ratio of 2.4 or below to 1 or W is covered with a side wall insulating film 31. Therefore, abnormal oxidation hardly occurs in the control gate resistance lowering metal film 25 in a gate side wall oxidation process, and a gate electrode can be kept normal in shape and dimensions. W contained in the control gate resistance lowering metal film 25 is restrained from diffusing in an oxidizing furnace and causing metal contamination, voids are never produced in an interlayer insulating film, and superior embedding characteristics can be realized. COPYRIGHT: (C)2005,JPO&NCIPI
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