发明名称 |
Maskenmuster-Korrekturverfahren, Herstellungsverfahren einer Halbleitervorrichtung, Maskenherstellungsverfahren und Maske |
摘要 |
A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided. A mask pattern correction method, a mask production method, a mask produced thereby and a production method of a semiconductor device using the mask include a step of creating first position data indicating positions of a plurality of marks when supporting a first thin film having the marks in a state where a first surface directs upward, a step of creating second position data indicating mark positions when supporting the first thin film in a state where a second surface directs upward, a step of obtaining a transfer function for converting the first position data to the second position data, and a step of correcting a mask pattern as a shape of exposure beam transmission portions formed on a second thin film by using an inverse function of the transfer function. |
申请公布号 |
DE10392464(T5) |
申请公布日期 |
2005.02.17 |
申请号 |
DE2003192464T |
申请日期 |
2003.03.20 |
申请人 |
SONY CORP., TOKIO/TOKYO |
发明人 |
OMORI, SHINJI;KOIKE, KAORU;MORIYA, SHIGERU;ASHIDA, ISAO |
分类号 |
G03F1/08;G03F1/16;G03F1/20;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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