发明名称 Programmable embedded DRAM current monitor
摘要 This invention provides a method and apparatus for controlling the current drawn in a multi-bank memory device, for example, in a multi-bank memory system. The above and other features and advantages of the invention are achieved by a method and apparatus which controls access to a memory device to prevent an over-current condition. Each memory request is processed for each memory bank as an arbitrated event. A request is coordinated with the local memory controller circuitry controlling access to the memory bank. The memory bank is checked for its availability. The total current demand of the memory device is determined. If the memory bank request would not create an over-current condition and the memory bank is available, then the memory bank request is acknowledged and the memory request is carried out. Also provided is a method of fabricating such a memory device and also a method of operating such a memory device to access a selected memory bank.
申请公布号 US6857055(B2) 申请公布日期 2005.02.15
申请号 US20020218586 申请日期 2002.08.15
申请人 MICRON TECHNOLOGY INC. 发明人 JEDDELOH JOSEPH M.
分类号 G06F1/28;G06F12/00;G06F13/16;G11C11/4074;G11C11/4078;(IPC1-7):G06F12/00 主分类号 G06F1/28
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