| 摘要 |
A plasma source for use in, for example, semiconductor processing contains a radio-frequency generator, an impedance matching network, and a coil that encloses a tube. The coil is bifilar, i.e., the turns of one are interlaced with the turns of a second winding. The matching network supplies only a single coil in the plasma source, unlike conventional arrangements wherein a single matching network supplies multiple coils in the plasma source.
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