发明名称 Mask, exposure method, line width measuring method, and method for manufacturing semiconductor devices
摘要 A mask of the present invention has a circuit pattern to be transferred to a substrate via an optical system, and an inspection pattern to be used for a measurement of a line width of the pattern transferred to the substrate. By using such a mask, the time for proceeding from inspection to actual device exposure can be shortened.
申请公布号 US6855997(B2) 申请公布日期 2005.02.15
申请号 US20000729339 申请日期 2000.12.05
申请人 NIKON CORPORATION 发明人 SUWA KYOICHI
分类号 H01L21/027;G03F1/00;G03F1/08;G03F1/14;G03F1/38;G03F1/44;G03F7/20;H01L21/66;H01L23/544;(IPC1-7):H01L31/023 主分类号 H01L21/027
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