发明名称 |
Self aligned double gate transistor having a strained channel region and process therefor |
摘要 |
A method of manufacturing an integrated circuit with a strained semiconductor channel region. The method can provide a double gate structure. The gate structure can be provided in and above a trench. The trench can be formed in a compound semiconductor material such as a silicon-germanium material. The strained semiconductor can increase the charge mobility associated with the transistor. A silicon-on-insulator substrate can be used.
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申请公布号 |
US6855982(B1) |
申请公布日期 |
2005.02.15 |
申请号 |
US20040770163 |
申请日期 |
2004.02.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;PAN JAMES N.;LIN MING REN |
分类号 |
H01L21/336;H01L29/51;H01L29/786;(IPC1-7):H11L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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