发明名称 |
Method for making contact with a doping region of a semiconductor component |
摘要 |
A method makes contact with a doping region formed at a substrate surface of a substrate. An insulating layer is applied on the substrate surface and a contact hole is formed in the insulating layer. A metal-containing layer is subsequently deposited on the insulating layer and the surface region of the doping region that is uncovered by the contact hole. In a subsequent thermal process having two steps, first the metal-containing layer is reacted with the silicon of the doping region to form a metal silicide layer and then the rest of the metal-containing layer is converted into a metal-nitride-containing layer in a second thermal step.
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申请公布号 |
US6855630(B1) |
申请公布日期 |
2005.02.15 |
申请号 |
US20030614430 |
申请日期 |
2003.07.07 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
RUF ALEXANDER;URBANSKY NORBERT;CLAUSSEN WILHELM;GAERTNER THOMAS;SCHMIDBAUER SVEN |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/44;H01L21/336 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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