| 摘要 |
This invention relates to a generic process for producing a refractory oxide at a temperature below the melting point of the pure refractory oxide, by the steps of heating a fully hydrated halide or a hydrated halide-oxide dried cationically homogeneous nanostructured mixture to a temperature at which a cationically homogeneous nanostructured solid state hydroxyhalide is produced. The solid state hydroxyhalide is then heated to its decomposition-temperature, at which it decomposes, by heat alone, into a cationically homogeneous nanostructured solid state oxyhalide; and performing one of the following heating steps: (i) heating the solid state oxyhalide to a solid state oxyhalide decomposition-temperature at which it chemically decomposes, by heat alone, into a cationically homogeneous nanostructured solid state refractory oxide; or (ii) heating the solid state oxyhalide to a molten state decomposition-temperature at which it chemically decomposes, by heat alone, into a cationically homogeneous nanostructured solid state refractory oxide; or (iii) heating the solid state oxyhalide to a vapor state decomposition-temperature at which it chemically decomposes, by heat alone, into a cationically homogeneous nanostructured solid state refractory oxide.
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