摘要 |
Methods for using a length dispersion of an etalon to approximate target resonant frequencies. Length dispersion usage in the present invention includes, for example, determining the impact of a length dispersion of an etalon on resonant frequencies of the etalon and may involve, for example, selection of one a more of a refractive index step, a number of layers, and a layer thickness of one or both dielectric stacks of the etalon in consideration of length dispersion. A featured method comprises defining target resonant frequencies and selecting an etalon having resonant frequencies which approximate the target resonant frequencies wherein the selection of the etalon is made based at least in part in consideration of a length dispersion of the etalon.
|