发明名称 |
ION IRRADIATION OF TARGET WITH SUPER-HIGH AND SUPER-LOW KINETIC ION ENERGY |
摘要 |
PROBLEM TO BE SOLVED: To provide a means for irradiating a substrate with ions having a wide span of kinetic energy value based on the pattern that is precisely and previously defined. SOLUTION: The particle-beam exposure apparatus for irradiating a target 41 with an ion beam 2 of energetic charged-particles has an illumination system 101 that generates and forms the energetic charged-particles in a directional ion beam 21, an aperture through which the energetic particles in a path of the directional beam pass, a pattern defining means 102 for forming a patterned beam for irradiation from the means through the aperture, and a projection system 31 that is disposed behind the pattern defining means and projects the patterned beam 22 onto the target disposed behind the projection system. The apparatus further has an acceleration/slowdown means, which is directed substantially parallel to the path of the formed beam and includes potential graduation fixed across at least a section of the beam. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005039254(A) |
申请公布日期 |
2005.02.10 |
申请号 |
JP20040189709 |
申请日期 |
2004.06.28 |
申请人 |
IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH |
发明人 |
PLATZGUMMER ELMAR;STENGL GERHARD;LOESCHNER HANS |
分类号 |
G03F7/20;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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