发明名称 ION IRRADIATION OF TARGET WITH SUPER-HIGH AND SUPER-LOW KINETIC ION ENERGY
摘要 PROBLEM TO BE SOLVED: To provide a means for irradiating a substrate with ions having a wide span of kinetic energy value based on the pattern that is precisely and previously defined. SOLUTION: The particle-beam exposure apparatus for irradiating a target 41 with an ion beam 2 of energetic charged-particles has an illumination system 101 that generates and forms the energetic charged-particles in a directional ion beam 21, an aperture through which the energetic particles in a path of the directional beam pass, a pattern defining means 102 for forming a patterned beam for irradiation from the means through the aperture, and a projection system 31 that is disposed behind the pattern defining means and projects the patterned beam 22 onto the target disposed behind the projection system. The apparatus further has an acceleration/slowdown means, which is directed substantially parallel to the path of the formed beam and includes potential graduation fixed across at least a section of the beam. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005039254(A) 申请公布日期 2005.02.10
申请号 JP20040189709 申请日期 2004.06.28
申请人 IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH 发明人 PLATZGUMMER ELMAR;STENGL GERHARD;LOESCHNER HANS
分类号 G03F7/20;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
代理机构 代理人
主权项
地址