Method for manufacturing a semiconductor device and a semiconductor device manufactured thereby

摘要

A method for manufacturing a semiconductor device is provided, which is consisting of the steps of: forming a transistor on a surface region of a semiconductor substrate which is isolated by an insulating isolation region; forming an inter-layer insulation film provide with a hydrogen supplying path that reaches said isolation region on said semiconductor substrate on which said transistor is formed; and supplying hydrogen in said semiconductor substrate from said hydrogen supplying path through said isolation region by carrying out heat treatment. And also the semiconductor device is provided manufactured thereby.