发明名称 SEMICONDUCTOR ELEMENT AND HIGH FREQUENCY POWER AMPLIFYING APPARATUS
摘要 PROBLEM TO BE SOLVED: To attain downsizing and cost reduction of a semiconductor element. SOLUTION: In the semiconductor element including: a semiconductor substrate; and transistors formed on the semiconductor substrate and for configuring first-stage and next-stage amplifiers of first and second amplifier systems, part of the region of the semiconductor substrate includes: first, second, and third transistors configuring the first-stage amplifier of the first amplifier system and the next-stage amplifier of the second amplifier system; and a switch element for selecting two prescribed transistors among the three transistors on the basis of a received switching signal. By switching the switch element, the first-stage amplifier of the first amplifier system is configured with the second and third transistors or the next-stage amplifier of the second amplifier system is configured with the first and second transistors. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005039320(A) 申请公布日期 2005.02.10
申请号 JP20030196991 申请日期 2003.07.15
申请人 RENESAS TECHNOLOGY CORP;HITACHI ULSI SYSTEMS CO LTD 发明人 SUZUKI SHOJI;TABEI SHIN;NIHONGI YASUTAKA;SOGA TAKASHI
分类号 H01L27/04;H01L21/82;H01L21/822;H01L21/8234;H01L27/088;H03F3/21;H03F3/24;H03F3/68;(IPC1-7):H03F3/24;H01L21/823 主分类号 H01L27/04
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