发明名称 |
SEMICONDUCTOR ELEMENT AND HIGH FREQUENCY POWER AMPLIFYING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To attain downsizing and cost reduction of a semiconductor element. SOLUTION: In the semiconductor element including: a semiconductor substrate; and transistors formed on the semiconductor substrate and for configuring first-stage and next-stage amplifiers of first and second amplifier systems, part of the region of the semiconductor substrate includes: first, second, and third transistors configuring the first-stage amplifier of the first amplifier system and the next-stage amplifier of the second amplifier system; and a switch element for selecting two prescribed transistors among the three transistors on the basis of a received switching signal. By switching the switch element, the first-stage amplifier of the first amplifier system is configured with the second and third transistors or the next-stage amplifier of the second amplifier system is configured with the first and second transistors. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005039320(A) |
申请公布日期 |
2005.02.10 |
申请号 |
JP20030196991 |
申请日期 |
2003.07.15 |
申请人 |
RENESAS TECHNOLOGY CORP;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
SUZUKI SHOJI;TABEI SHIN;NIHONGI YASUTAKA;SOGA TAKASHI |
分类号 |
H01L27/04;H01L21/82;H01L21/822;H01L21/8234;H01L27/088;H03F3/21;H03F3/24;H03F3/68;(IPC1-7):H03F3/24;H01L21/823 |
主分类号 |
H01L27/04 |
代理机构 |
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