| 摘要 |
A method and system are provided for delivering a source gas to a processing chamber. A source gas delivery method includes providing a precursor chamber configured to hold precursor vapor, providing a saturated precursor vapor at a selected pressure within the precursor, chamber, and flowing or diffusing saturated precursor vapor from the precursor chamber to the processing chamber until a selected pressure is provided in the processing chamber. A source gas delivery system includes a precursor chamber configured to hold precursor vapor, a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber, and a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a selected pressure is provided in the processing chamber. Advantageously, the present invention allows for improved precursor vapor delivery and enhanced control over thin film deposition with less waste of precursor material.
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