发明名称 |
Method to manufacture Indium Nitride quantum dots |
摘要 |
The invention concerns a method for manufacturing sizeable quantum dots of Indium Nitride in which a layer of Indium Nitride is grown onto a layer of crystalline buffer. The crystalline buffer is chosen with a lattice structure similar to the lattice structure of Indium Nitride and with the lattice mismatch between Indium Nitride and the crystalline buffer being greater than 5%. During the growth of Indium Nitride, surface strains are produced by the crystalline buffer, allowing the Indium Nitride to self-organise onto the crystalline buffer so as to form a plurality of sizeable quantum dots.
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申请公布号 |
US2005028726(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20030689841 |
申请日期 |
2003.10.22 |
申请人 |
BRIOT OLIVIER;GIL BERNARD;RUFFENACH SANDRA |
发明人 |
BRIOT OLIVIER;GIL BERNARD;RUFFENACH SANDRA |
分类号 |
C30B25/02;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B25/02 |
代理机构 |
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主权项 |
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地址 |
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