| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having a charge-trap memory cell which is divided into slices, and has a type of virtual ground architecture. SOLUTION: The potential trap memory architecture of virtual ground has an interconnection (6) which exists in parallel with a word line (2), and a separation 1 between STI elements which exists in parallel with a bit line (4). A separation (7) between STI elements in which the width is expanded in order to divide into slices, is provided. In place of the same, the interconnection which exists under the bit line can be omitted, or two bit lines (41, 42) which are adjoined each other can be connected, so that a memory transistor which exists among these operate only in dummy modes. COPYRIGHT: (C)2005,JPO&NCIPI
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