| 摘要 |
PROBLEM TO BE SOLVED: To reduce the consumption current in at least a temperature security region of operation in a semiconductor device equipped with a thermal shutdown circuit. SOLUTION: An n-channel MOS transistor 17 for a switch is prepared in a power supply wiring 11 for supplying power to a thermal shutdown circuit 1. The gate electrode of the transistor 17 is connected with a GND wiring 15. The threshold voltage of the transistor 17 is set as a value wherein a channel current is not passed in the temperature security region of operation of the semiconductor device, and a leakage current is generated in a prescribed high temperature region which current can operate the thermal shutdown circuit 1. COPYRIGHT: (C)2005,JPO&NCIPI
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