发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.
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申请公布号 |
US2005032336(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040940821 |
申请日期 |
2004.09.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;NAKAMURA OSAMU;KAJIWARA MASAYUKI;KOEZUKA JUNICHI;DAIRIKI KOJI;MITSUKI TORU;TAKAYAMA TORU;OHNUMA HIDETO;ASAMI TAKETOMI;ICHIJO MITSUHIRO |
分类号 |
G02F1/1368;H01L21/20;H01L21/28;H01L21/322;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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