Flash memory device e.g. non-volatile EEPROM, for storing information, has variable bit line voltage generating circuit generating variable bit line voltage changed in response to supply voltage and proportional to supply voltage

摘要

The device has a bit line voltage setting circuit (36) setting a voltage on a bit line of a given memory cell to be programmed to a variable bit line voltage. A variable bit line voltage generating circuit (38) generates the variable bit line voltage that is changed in response to a supply voltage. The variable bit line voltage is proportional to the supply voltage, if the supply voltage falls within a given voltage range. An independent claim is also included for a method of facilitating programming in a semiconductor device.