SEMICONDUCTOR DEVICE HAVING TRENCH WIRING AND PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

[PROBLEMS] The present invention provides a highly reliable multilayer wiring by avoiding problems such as short circuit and increase in the via resistance which are caused by misalignment. [MEANS FOR SOLVING PROBLEMS] The semiconductor device comprises a first wiring layer (201), and interlayer insulating layers (202-208). The first wiring layer (201) is provided on the upper surface of a substrate and includes a first wiring. The interlayer insulating layers (202-208) are provided on the first wiring layer (201) and include a via having one end connected with the first wiring and a second wiring connected with the other end of the via. The interlayer insulating layers (202-208) have a relative dielectric constant lower than that of a silicon oxide film. The upper part of the interlayer insulating layers (202-208) is composed of a silicon oxide film (206), a silicon nitride film (207) and a silicon oxide film (208) formed sequentially from the lower location.