SILICON EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer which can prevent the generation of an observable haze phenomenon using a light condensing lamp in a dark room and have the main surface of a face direction of about [110], and a method for manufacturing the wafer. SOLUTION: A silicon epitaxial layer having a haze level of 0.18 ppm or less is formed by vapor phase growth on the main surface of a silicon single crystalline substrate having an off-angle inclined by an angle not smaller than 0.5°and not larger than 3°in a <100> axial direction nearest from a ä110} face. COPYRIGHT: (C)2005,JPO&NCIPI