| 摘要 |
A voltage regulator for electrically programmable, non-volatile memory devices, having an output terminal connected to a power supply line for programming the state of at least one memory element through at least one selection circuit means (MW,MB) and comprising at least first (R1) and second (R2) resistive elements connected between first and second terminals of a voltage supply. The regulator further comprises at least a second circuit means (MWd,MBd) being the homolog of the selection circuit means for programming the memory element, said second circuit means being connected serially to the resistive elements (R1,R2) across the two terminals of the voltage supply. Also provided is at least one controlled current generator (G1,G2) connected between one of the two voltage supply terminals and a linking node to one of the resistive elements and an operational amplifier (A) whose non-inverting (+) input is connected to a linking node to at least one of the resistive elements and whose output terminal is the output terminal of the regulator. <IMAGE>
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