发明名称 |
Negative differential resistance (NDR) memory device with reduced soft error rate |
摘要 |
An active negative differential resistance element (an NDR FET) and a memory device (such as an SRAW using such elements is disclosed Soft error rate (SER) performance for NDR FETs and such memory devices are enhanced by adjusting a location of charge traps in a charge trapping layer that is responsible for effectuating an NDR behavior. Both an SER and a switching speed performance characteristic can be tailored by suitable placement of the charge traps.
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申请公布号 |
US6853035(B1) |
申请公布日期 |
2005.02.08 |
申请号 |
US20040831867 |
申请日期 |
2004.04.26 |
申请人 |
SYNOPSYS, INC. |
发明人 |
KING TSU-JAE |
分类号 |
G11C5/00;G11C11/412;(IPC1-7):H01L29/76 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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