| 摘要 |
Methods for fabricating a conductive contact (through-via) through a full thickness of a substrate such as a semiconductor wafer or interposer substrate, and semiconductor devices and systems incorporating the conductive through-via are provided. The conductive contact is fabricated by applying a metal layer onto a backside of a substrate, forming a through-hole through the substrate and the metal layer, sealing the hole in the metal layer by an electroless plating process, and filling the hole by an electroplating or an electroless plating process. |
