METHOD OF FORMING SALICIDE OF SEMICONDUCTOR DEVICE FOR SIMPLIFYING SALICIDATION PROCESS

摘要

PURPOSE: A method of forming a salicide of a semiconductor device is provided to simplify a salicidation process by performing a patterning process to form a desired salicide pattern. CONSTITUTION: Salicide material is formed on the entire surface of an active region(102) on which a logic device is formed. An etch mask having an arbitrary pattern is formed on the salicide material by a photo process. An etch process using chemicals is performed by using the etch mask as an etch barrier layer in order to remove selectively the salicide material. A salicide pattern is formed by removing selectively the salicide material. A salicide(104) is formed on the active region by a salicidation process using a thermal process.