METHOD FOR FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE TO FABRICATE SEMICONDUCTOR DEVICE WITH LOW DIELECTRIC CONSTANT AS COMPARED WITH CONVENTIONAL INTERLAYER DIELECTRIC

摘要

PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to fabricate a semiconductor device with a low dielectric constant as compared with a conventional interlayer dielectric by forming an air gap in an interlayer dielectric. CONSTITUTION: A metal layer is formed and patterned on a substrate having a predetermined structure. An insulation layer is formed on the substrate. A sacrificial layer and an insulation layer are repeatedly formed on the insulation layer. The sacrificial layer and the insulation layer are patterned to form an air gap. An oxide layer is formed on the patterned sacrificial layer and insulation layer.