发明名称 METHOD FOR FABRICATING ANALOG CAPACITOR TO PREVENT LEAKAGE CURRENT FROM INCREASING AND FABRICATE ANALOG CAPACITOR WITH SMALL POWER SUPPLY VOLTAGE
摘要 PURPOSE: A method for fabricating an analog capacitor is provided to prevent a leakage current from increasing and fabricate an analog capacitor with a small power supply voltage by setting post-treatment conditions of a lower electrode and a dielectric layer. CONSTITUTION: The first lower insulation layer is formed on a semiconductor substrate. The first lower conductive layer made of at least one conductive layer is formed on the front surface of the semiconductor substrate having the first lower insulation layer. The first dielectric layer and the first upper conductive layer made of at least one conductive layer are sequentially formed on the first lower conductive layer so as to fabricate a capacitor(1). The capacitance of the capacitor is measured according to a voltage(3). The measured capacitance is analyzed(5). The post-treatment conditions of a lower electrode and a dielectric layer are set according to the result of the analysis(7).
申请公布号 KR20050014311(A) 申请公布日期 2005.02.07
申请号 KR20030052885 申请日期 2003.07.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, YONG KUK;KWON, DAE JIN;WON, SEOK JUN
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
代理机构 代理人
主权项
地址