METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE TO PREVENT CHARACTERISTIC OF OXIDE LAYER BETWEEN LOWER ELECTRODE AND NITRIDE LAYER AND MAXIMIZE PHOSPHOROUS DOPING PROCESS AND NITRIFICATION EFFECT

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent a characteristic of an oxide layer between a lower electrode and a nitride layer and maximize a phosphorous doping process and a nitrification effect by using an oxide layer having a higher dielectric constant than a nitride layer. CONSTITUTION: A lower electrode(11) is formed on a semiconductor substrate. The first oxide layer is formed on the lower electrode. A high dielectric oxide layer selected from a group of an Al2O3 layer, a HfO2 layer, an Y2O3 layer and a ZrO2 layer is formed on the first oxide layer. A nitride layer(19) is formed on the high dielectric oxide layer. The second oxide layer(21) is formed on the nitride layer. An upper electrode is formed on the second oxide layer.