CHEMICAL MECHANICAL POLISHING SLURRY AND POLISHING METHOD USING THE SAME FOR PREVENTING REDUCTION OF POLISHING STOP LAYER IN THICKNESS THEREOF AND RESTRAINING DISHING PHENOMENON OF POLISHING TARGET LAYER

摘要

PURPOSE: A chemical mechanical polishing slurry and a polishing method using the same are provided to prevent reduction of a polishing stop layer in its thickness and restrain a dishing phenomenon of a polishing target layer by securing high selectivity to the polishing stop layer. CONSTITUTION: A chemical mechanical polishing slurry includes a polishing agent. The hardness of the polishing agent is higher than the hardness of a polishing target layer(30). In addition, the hardness of the polishing agent is lower than the hardness of a polishing stop layer(31). The polishing agent is formed with Cr3C3 or WC when the polishing target layer is formed with copper and the polishing stop layer is formed with titanium nitride.