METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICE TO SIMPLIFY FABRICATING PROCESS AND REDUCE FABRICATING COST

摘要

PURPOSE: A method for forming a transistor of a semiconductor device is provided to simplify a fabricating process and reduce fabricating cost by implanting short channel preventing ions without an additional mask process. CONSTITUTION: A dummy pattern is formed on a semiconductor substrate(51) by a photolithography process using a gate electrode mask. An insulation layer spacer is formed on the sidewall of the dummy pattern. A planarized interlayer dielectric is formed to expose the upper part of the dummy pattern. The exposed dummy pattern is removed to form a gate electrode region on the semiconductor substrate. High density impurity ions are implanted into the semiconductor substrate in the gate electrode region to form a high density channel region(63) by using the insulation layer spacer and the interlayer dielectric as a mask. A counter doping region(65) is formed in the center of the gate electrode region to leave the high density channel region only at the edge of the gate electrode region by a tilted ion implantation process using the insulation layer spacer and the interlayer dielectric as a mask. A gate electrode for burying the gate electrode region is formed.