SEMICONDUCTOR DEVICE FABRICATION METHOD USING SELECTIVE SILICIDE FORMING METHOD FOR FORMING SELECTIVELY SILICIDE ONLY ON GATE

摘要

PURPOSE: A semiconductor device fabrication method using a selective silicide forming method is provided to form selectively the silicide only on a gate by performing a cobalt deposition process or a nickel deposition process instead of an SiON deposition process. CONSTITUTION: A gate oxide layer is formed on a semiconductor substrate(10). A polysilicon layer is formed on the gate oxide layer. A silicide metal layer is formed on the polysilicon layer. A photoresist layer pattern is formed on the silicide metal layer. The silicide metal layer is etched by using the photoresist layer pattern as an etching mask. A silicide metal layer pattern(40a) is formed by etching the silicide metal layer. The photoresist layer pattern is removed therefrom. A gate pattern having a stacked structure of the polysilicon layer pattern and the silicide metal layer pattern is formed by etching the polysilicon layer.