| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which the fall of a resist selection ratio can be prevented and, in addition, no damage is given to a low-dielectric constant interlayer insulating film covered with a resist mask and composed of an SiOCH- or SiOC-based material in dry-etching the interlayer insulating film. SOLUTION: In the method, the low-dielectric constant interlayer insulating film is etched with an etching gas composed of a mixed gas prepared by adding a CxHx gas containing C atoms by a number of 1-4 or HFC gas containing C atoms by the number of 1-3 to a perfluorocarbon gas at a rate of 20-50% of the total flow rate of the etching gas by introducing the etching gas under a working pressure of≤1 Pa. COPYRIGHT: (C)2005,JPO&NCIPI
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