发明名称 |
Method of bonding semiconductor devices |
摘要 |
A method of bonding semiconductor devices is disclosed. The method comprises providing a first substrate having a first conductive interconnecting structure formed thereon and a second substrate having a second conductive interconnecting structure formed thereon. A first conductive passivation layer is selectively formed over exposed areas of the first conductive interconnecting structure. A second conductive passivation layer is selectively formed over exposed areas of the second conductive interconnecting structure. The first substrate and the second substrate are bonded together in such a way that the first conductive passivation layer bonds to the second conductive passivation layer to create a passivation-passivation interface.
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申请公布号 |
US2005025942(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030631508 |
申请日期 |
2003.07.31 |
申请人 |
KLOSTER GRANT;RAMANATHAN SHRIRAM;CHEN CHIN-CHANG;FISCHER PAUL |
发明人 |
KLOSTER GRANT;RAMANATHAN SHRIRAM;CHEN CHIN-CHANG;FISCHER PAUL |
分类号 |
B32B3/00;H01L21/762;(IPC1-7):B32B3/00 |
主分类号 |
B32B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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